✔ Kegunaan Gunn Diode

Kegunaan Gunn Diode

- March 11, 2018

Baritt barrier injection transit time diode adalah jenis diode yang bekerja dengan prinsip emisi termionik. A gunn diode is a semiconductor device formed by only n type material.

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5 Block Diagram Of Mrr 1 Gunn Diode Oscillator With

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This property allows it to amplify functioning as a radio frequency amplifier or to become unstable and oscillate when it is biased with a dc voltage.

Kegunaan gunn diode. Gunn diode adalah jenis diode yang tidak memiliki pn junction melainkan hanya terdiri dari dua elektroda. They are employed wherever a stable low cost microwave source is needed. The gunn diode gd is a homogeneous semiconducting crystal based on iii v group elements including gaas insb inas znse and cdte.

It is also termed as a transferred electron device. The gunn diode or transferred electron device can be termed a diode because it has two electrodes. Figure 1 shows the schematic structure of the gunn diode.

It is used to generate rf and microwave frequencies. Gunn diodes are used to build oscillators for generating microwaves with frequencies ranging from 10 ghz to thz. The gunn diode is a unique component even though it is called a diode it does not contain a pn diode junction.

This means a gunn diode has a region of negative differential resistance in its currentvoltage characteristic curve in which an increase of applied voltage causes a decrease in current. Dioda jenis ini dapat digunakan untuk menghasilkan sinyal gelombang mikro. It is a negative differential resistance device also called as transferred electron device oscillator which is a tuned circuit consisting of gunn diode with dc bias voltage applied to it.

In this article you will get to know about the working characteristic curvce advantages disadvantages and applications of gunn diode. Gunn diodes have been commercially successful as microwave oscillators since the late 1960s. Gunn diodes can be made from the materials which consist of multiple initially empty closely spaced energy valleys in their conduction band like gallium.

Gunn diode is a transferred electronic device which is composed of only one type of semiconductor ie. Gunn diode is a passive semiconductor device with two terminals which composes of only an n doped semiconductor material unlike other diodes which consist of a p n junction. However the most common and the most studied material used for gunn diodes is gaas.

Ada beberapa jenis dari diode pertemuan yang hanya menekankan perbedaan pada aspek fisik baik ukuran geometrik tingkat pengotoran jenis elektrode ataupun jenis pertemuan atau benar benar peranti berbeda seperti diode gunn diode laser dan diode mosfet. N type and utilizes the negative resistance characteristics to generate current at high frequencies.